Design and measurement of a silicon double quantum dot qubit with dispersive microwave readout

POSTER

Abstract

The electronic states of a semiconductor quantum dot are a promising candidate for quantum information processing. We describe a circuit QED qubit architecture in which a semiconductor qubit in silicon is capacitively coupled to a 6 GHz superconducting resonator. Silicon is an attractive material on account of the long electron spin lifetime. We discuss the design and operation of both the laterally defined double quantum dot qubit as well as the balanced coplanar stripline resonator.~~We focus in particular on the chip design and the specifics of the measurement setup, including both low and high frequency filtering. We also discuss the possibility of operating this device as a spin qubit by way of applying an inhomogeneous magnetic field.

*This work is supported by the DARPA-QuEST program.

Authors

  • Edward Henry

    • UC Berkeley, QNL
  • Andrew Schmidt

    • U.C. Berkeley, QNL
    • UC Berkeley, QNL
  • Mathew House

    • University of California, Los Angeles
    • UCLA
  • Yao-Tseng Wang

    • UC Berkeley
  • Cheuk Lo

    • UC Berkeley
  • Hong Pan

    • UCLA
  • Xin Xiao

    • UCLA
  • Hanhan Li

    • UC Berkeley
  • Loren Greenman

    • UC Berkeley
  • Birgitta Whaley

    • Department of Chemistry, University of California, Berkeley, California 94720, USA
    • University of California, Berkeley
    • UC Berkeley
  • Hongwen Jiang

    • UCLA
  • Eli Yablonovitch

    • UC Berkeley
  • Jeffrey Bokor

    • Lawrence Berkeley National Laboratory
    • UC Berkeley
  • I. Siddiqi

    • UC Berkeley, QNL
    • U.C. Berkeley, QNL
    • University of California at Berkeley