Electronic transport in MBE-grown $Bi_{2}Se_{3}$ topological insulator thin film field effect devices
ORAL
Abstract
Topological insulators (TI), such as $Bi_{2}Se_{3}$ and $Bi_{2}Te_{3}$, have attracted a lot of attention due to their exotic electronic properties. $Bi_{2}Se_{3}$ TI films grown by molecular beam epitaxy (MBE) are promising for studying the nature of topologically protected surface states due to their large size, high quality, the capability to tune the thickness and interface with various semiconductor substrates. In this study, thin films of $Bi_{2}Se_{3}$ have been grown on $GaAs$ (001) semi-insulating substrates in a III-V/II-VI dual chamber MBE system. To study the electronic properties, micrometer scale Hall-bar devices with high-$k$ dielectric ($Al_{2}O_{3}$) top gates have been fabricated. Systematical measurements of temperature dependent and electrical field modulated magnetro-transport are performed to exam the conduction contributed by the surface states.
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Authors
Tai-Lung Wu
Physics department, Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907
Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907
Jifa Tian
Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907
Helin Cao
Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907
Yi Xuan
Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907
Xinyu Liu
Department of Physics,University of Notre Dame, Notre Dame, IN 46556
Jack Furdyna
Department of Physics,University of Notre Dame, Notre Dame, IN 46556
Yong Chen
Purdue University
Physics department, Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907
Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907
