Focus Session: Dielectric, Ferroelectric, and Piezoelectric Oxides - Conducting Domain Walls and Conduction Mechanisms

Presentations

• Conduction of topologically-protected charged ferroelectric domain walls

  ORAL

  Feb. 28, 2012, 8:00 AM – Feb. 28, 2012, 8:12 AM

  Authors

  • Weida Wu

    • Department of Physics and Astronomy and Rutgers Center for Emergent Materials, Rutgers University, Piscataway, New Jersey 08854, USA
    • Department of Physics and Astronomy and Rutgers Center for emergent materials, Rutgers University, Piscataway, NJ 08854 USA

  • Yoichi Horibe

    • Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
    • Department of Physics and Astronomy and Rutgers Center for emergent materials, Rutgers University, Piscataway, NJ 08854 USA

  • Nara Lee

    • Department of Physics and Astronomy and Rutgers Center for Emergent Materials, Rutgers University, Piscataway, New Jersey 08854, USA
    • Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
    • Rutgers University
    • Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University
    • Rutgers Center for Emergent Materials and Dept of Phys and Astronomy, Rutgers U., NJ, USA
    • Department of Physics and Astronomy and Rutgers Center for emergent materials, Rutgers University, Piscataway, NJ 08854 USA

  • S-W. Cheong

    • Rutgers Center for Emergent Materials
    • Rutgers University
    • Department of Physics and Astronomy and Rutgers Center for Emergent Materials, Rutgers University, Piscataway, New Jersey 08854, USA
    • Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
    • Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University
    • Rutgers Center for Emergent Materials and Dept of Phys and Astronomy, Rutgers U., NJ, USA
    • Department of Physics and Astronomy and Rutgers Center for emergent materials, Rutgers University, Piscataway, NJ 08854 USA

  • Jeffery Guest

    • Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA
    • Center for Nanoscale Materials, Argonne National Laboratory
    • Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439 USA

  View abstract →

• Electrical dressing of domain walls in hexagonal ErMnO$_3$

  ORAL

  Feb. 28, 2012, 8:12 AM – Feb. 28, 2012, 8:24 AM

  Authors

  • Dennis Meier

    • UC Berkeley

  • Jan Seidel

    • UC Berkeley

  • Andres Cano

    • European Synchrotron Radiation Facility

  • Kris Delaney

    • UC Santa Barbara

  • Yu Kumagai

    • ETH Zuerich

  • Maxim Mostovoy

    • University of Groningen

  • Nicola A. Spaldin

    • ETH Zuerich

  • Manfred Fiebig

    • ETH Zuerich

  • Ramamoorthy Ramesh

    • UC Berkeley

  View abstract →

• Anisotropic conductance at improper ferroelectric domain walls

  ORAL

  Feb. 28, 2012, 8:24 AM – Feb. 28, 2012, 8:36 AM

  Authors

  • Jan Seidel

    • Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
    • Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse, 8093 Zurich, Switzerland
    • Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands
    • Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA
    • European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, 38043 Grenoble, France
    • Department of Physics, University of California, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

  • Jan Seidel

    • Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
    • Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse, 8093 Zurich, Switzerland
    • Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands
    • Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA
    • European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, 38043 Grenoble, France
    • Department of Physics, University of California, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

  • Jan Seidel

    • Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
    • Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse, 8093 Zurich, Switzerland
    • Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands
    • Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA
    • European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, 38043 Grenoble, France
    • Department of Physics, University of California, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

  • Jan Seidel

    • Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
    • Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse, 8093 Zurich, Switzerland
    • Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands
    • Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA
    • European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, 38043 Grenoble, France
    • Department of Physics, University of California, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

  • Jan Seidel

    • Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
    • Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse, 8093 Zurich, Switzerland
    • Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands
    • Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA
    • European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, 38043 Grenoble, France
    • Department of Physics, University of California, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

  • Jan Seidel

    • Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
    • Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse, 8093 Zurich, Switzerland
    • Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands
    • Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA
    • European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, 38043 Grenoble, France
    • Department of Physics, University of California, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

  • Jan Seidel

    • Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
    • Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse, 8093 Zurich, Switzerland
    • Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands
    • Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA
    • European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, 38043 Grenoble, France
    • Department of Physics, University of California, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

  • Jan Seidel

    • Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
    • Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse, 8093 Zurich, Switzerland
    • Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands
    • Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA
    • European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, 38043 Grenoble, France
    • Department of Physics, University of California, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

  • Jan Seidel

    • Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
    • Department of Materials, ETH Zurich, Wolfgang-Pauli-Strasse, 8093 Zurich, Switzerland
    • Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands
    • Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA
    • European Synchrotron Radiation Facility, 6 Rue Jules Horowitz, 38043 Grenoble, France
    • Department of Physics, University of California, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

  View abstract →

• Conduction at domain walls in insulating Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ thin films

  ORAL

  Feb. 28, 2012, 8:36 AM – Feb. 28, 2012, 8:48 AM

  Authors

  • Jill Guyonnet

    • DPMC, University of Geneva

  • Iaroslav Gaponenko

    • DPMC, University of Geneva

  • Stefano Gariglio

    • DPMC, University of Geneva

  • Patrycja Paruch

    • DPMC, University of Geneva

  View abstract →

• Interplay between polarization and conductivity in BiFeO$_{3}$ thin films

  ORAL

  Feb. 28, 2012, 8:48 AM – Feb. 28, 2012, 9:00 AM

  Authors

  • Saeedeh Farokhipoor

    • Zernike Institute for Advanced Materials, Netherlands

  • Beatriz Noheda Pinuaga

    • Zernike Institute for Advanced Materials, Netherlands

  View abstract →

• Tunable Metallic Conductivity in Ferroelectric Nanodomains

  ORAL

  Feb. 28, 2012, 9:00 AM – Feb. 28, 2012, 9:12 AM

  Authors

  • P. Maksymovych

    • Center of Nanophase Materials Sciences, Oak Ridge National Laboratory, TN, USA 37831
    • Oak Ridge National Laboratory
    • Oak Ridge National Laboratory, Oak Ridge, TN

  • A.N. Morozovska

    • Institute for Semiconductor Physics, National Academy of Science of Ukraine

  • Pu Yu

    • Department of Materials Science and Engineering , University of California, Berkeley, CA
    • University of California,Berkeley / Lawrence Berkeley National Lab

  • E.A. Eliseev

    • Institute for Problems of Materials Science, National Academy of Science of Ukraine

  • Y.-H. Chu

    • Department of Materials Science and Engineering, National Chiao Tung University

  • R. Ramesh

    • Department of Materials Science and Engineering, University of California, Berkeley, CA
    • US DOE / UC Berkeley
    • University of California,Berkeley / Lawrence Berkeley National Lab

  • A.P. Baddorf

    • Oak Ridge National Laboratory
    • Oak Ridge National Laboratory, Oak Ridge, TN

  • S.V. Kalinin

    • Oak Ridge National Laboratory
    • Oak Ridge National Laboratory, Oak Ridge, TN

  View abstract →

• Ultrafast p-d charge-transfer carrier dynamics of multiferroic BiFeO3

  ORAL

  Feb. 28, 2012, 9:12 AM – Feb. 28, 2012, 9:24 AM

  Authors

  • Y.M. Sheu

    • Center for Integrated Nanotechnologies, LANL, Los Alamos, NM 87545

  • S.A. Trugman

    • Center for Integrated Nanotechnologies, LANL, Los Alamos, NM 87545

  • Y.-S. Park

    • Center for Integrated Nanotechnologies, LANL, Los Alamos, NM 87545

  • S.-W. Cheong

    • Department of Physics and Astronomy, Rutgers University, NJ 08854

  • Q. Jia

    • Center for Integrated Nanotechnologies, LANL, Los Alamos, NM 87545

  • A.J. Taylor

    • Center for Integrated Nanotechnologies, LANL, Los Alamos, NM 87545

  • R.P. Prasankumar

    • Center for Integrated Nanotechnologies, LANL, Los Alamos, NM 87545

  View abstract →

• Photocurrent effect of epitaxial tetragonal-like BiFeO$_{3}$ thin film

  ORAL

  Feb. 28, 2012, 9:24 AM – Feb. 28, 2012, 9:36 AM

  Authors

  • Kanghyun Chu

    • Department of Physics, KAIST

  • Chang-Su Woo

    • Department of Physics, KAIST

  • Seung Jin Kim

    • Department of Physics, KAIST

  • Ji Ho Sung

    • Department of Materials Science and Engineering, POSTECH

  • Wonmo Lee

    • Department of Materials Science and Engineering, POSTECH

  • Moon-Ho Jo

    • Department of Materials Science and Engineering, POSTECH

  • Chan-Ho Yang

    • Department of Physics, KAIST

  View abstract →

• Intrinsic defects in BiFeO3: Energetics and implication for magetism

  ORAL

  Feb. 28, 2012, 9:36 AM – Feb. 28, 2012, 9:48 AM

  Authors

  • Tula R. Paudel

    • University of Nebraska, Lincoln

  • Sitaram S. Jaswal

    • University of Nebraska - Lincoln
    • University of Nebraska, Lincoln

  • Evgeny Tsymbal

    • University of Nebraska, Lincoln
    • Department of Physics and Astronomy, University of Nebraska-Lincoln
    • University of Nebraska - Lincoln
    • Department of Physics and Astronomy,University of Nebraska-Lincoln

  View abstract →

• Dielectric screening enhanced Hall mobility in doped ferroelectrics

  ORAL

  Feb. 28, 2012, 9:48 AM – Feb. 28, 2012, 10:00 AM

  Authors

  • Wolter Siemons

    • Oak Ridge National Laboratory

  • Michael A. McGuire

    • Oak Ridge National Laboratory

  • Valentino R. Cooper

    • Oak Ridge National Laboratory

  • Michael D. Biegalski

    • Oak Ridge National Laboratory

  • Ilia N. Ivanov

    • Oak Ridge National Laboratory

  • Gerald E. Jellison

    • Oak Ridge National Laboratory

  • Lynn A. Boatner

    • Oak Ridge National Laboratory

  • Brian C. Sales

    • Oak Ridge National Laboratory

  • Hans M. Christen

    • Oak Ridge National Laboratory

  View abstract →

• The persistence of ferroelectric distortions in electron-doped BaTiO3: microscopic origins and critical behavior

  ORAL

  Feb. 28, 2012, 10:00 AM – Feb. 28, 2012, 10:12 AM

  Authors

  • Yong Wang

    • University of Nebraska - Lincoln

  • J.D. Burton

    • University of Nebraska
    • University of Nebraska, Lincoln
    • University of Nebraska - Lincoln, Nebraska Center for Materials and Nanoscience
    • University of Nebraska - Lincoln
    • Department of Physics and Astronomy,University of Nebraska-Lincoln

  • Sitaram S. Jaswal

    • University of Nebraska - Lincoln
    • University of Nebraska, Lincoln

  • Evgeny Tsymbal

    • University of Nebraska, Lincoln
    • Department of Physics and Astronomy, University of Nebraska-Lincoln
    • University of Nebraska - Lincoln
    • Department of Physics and Astronomy,University of Nebraska-Lincoln

  View abstract →

• Multiphysics model of semiconducting ferroelectrics and its application to memory devices

  ORAL

  Feb. 28, 2012, 10:12 AM – Feb. 28, 2012, 10:24 AM

  Authors

  • Nathaniel Ng

    • California Institute of Technology

  • Kaushik Bhattacharya

    • California Institute of Technology

  View abstract →

• Conduction mechanism in BiFeO$_{3}$-CoFe$_{2}$O$_{4}$ columnar nanostructure

  ORAL

  Feb. 28, 2012, 10:24 AM – Feb. 28, 2012, 10:36 AM

  Authors

  • Yi-Chun Chen

    • Department of Physics, National Cheng-Kung University, Tainan, Taiwan
    • Department of Physics, National Cheng Kung University

  • Ying-Hui Heish

    • Department of Materials Science and Engineering, National Chiao Tung University

  • Chen-Wei Liang

    • Department of Materials Science and Engineering, National Chiao Tung University

  • Jia-Ming Liou

    • Department of Physics, National Cheng Kung University

  • Ya-Ping Chiu

    • Department of Physics, National Sun Yat-Sen University

  • Qing He

    • Advanced Light Source, Lawrence Berkeley National Laboratory

  • Qian Zhan

    • Department of Materials Physics and Chemistry, University of Science and Technology Beijing

  • Ying-Hao Chu

    • Department of Materials Science and Engineering, National Chiao Tung University

  View abstract →

• Current-Controlled Negative Differential Resistance Due to Joule Heating In Tio$_2$

  ORAL

  Feb. 28, 2012, 10:36 AM – Feb. 28, 2012, 10:48 AM

  Authors

  • A.M. Bratkovsky

    • Hewlett-Packard Laboratories, Palo Alto

  • A.S. Alexandrov

    • Loughborough Inst. Technology, UK

  • S.E. Savel'ev

    • Loughborough Inst. Technology, UK

  • D.B. Strukov

    • UC Santa Barbara, Santa Barbara

  • R.S. Williams

    • Hewlett-Packard Laboratories, Palo Alto

  View abstract →

• Physical and Electrical Characterization of HfO$_{2}$, HfSiO$_{4}$, and ZrSiO$_{4}$ Memristors Based on Sol-Gel Synthesis

  ORAL

  Feb. 28, 2012, 10:48 AM – Feb. 28, 2012, 11:00 AM

  Authors

  • J.L. Tedesco

    • National Institute of Standards and Technology

  • Walter Zheng

    • National Institute of Standards and Technology

  • S. Pookpanratana

    • National Institute of Standards and Technology

  • A.A. Herzing

    • NIST
    • National Institute of Standards and Technology

  • P.P. Kavuri

    • National Institute of Standards and Technology

  • O.A. Kirillov

    • Semiconductor and Dimensional Metrology Div, NIST Gaithersburg, MD
    • National Institute of Standards and Technology

  • N.V. Nguyen

    • National Institute of Standards and Technology

  • Curt Richter

    • Semiconductor and Dimensional Metrology Div., NIST
    • Semiconductor and Dimensional Metrology Div, NIST Gaithersburg, MD
    • National Institute of Standards and Technology

  View abstract →