Focus Session: Dopants and Defects in Semiconductors - Si

Presentations

• Reliability of III-V electronic devices -- the defects that cause the trouble

  COFFEE_KLATCH · Invited

  Feb. 28, 2012, 8:00 AM – Feb. 28, 2012, 8:36 AM

  Authors

  • Sokrates Pantelides

    • Vanderbilt University
    • Vanderbilt University and ORNL
    • Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN
    • Physics and Astronomy Department

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• Near-Interface Defects in SiO$_{2}$/SiC MOS Devices

  ORAL

  Feb. 28, 2012, 8:36 AM – Feb. 28, 2012, 8:48 AM

  Authors

  • A.F. Basile

    • Simon Fraser University

  • P.M. Mooney

    • Simon Fraser University

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• Doping in Si/SiO$_{2}$ Structures: A first-principles metadynamics study

  ORAL

  Feb. 28, 2012, 8:48 AM – Feb. 28, 2012, 9:00 AM

  Authors

  • Nicholas Lanzillo

    • Rensselaer Polytechnic Institute

  • Philip Shemella

    • IBM Research - Zurich

  • Saroj Nayak

    • Rensselaer Polytechnic Institute
    • Computational Center for Nanotechnology Innovations, Department of Physics, Rensselaer Polytechnic Institute

  • Wanda Andreoni

    • IBM Research - Zurich

  • Alessandro Curioni

    • IBM Research - Zurich

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• The lifetime recovery puzzle in intermediate band materials: A new experimental approach

  ORAL

  Feb. 28, 2012, 9:00 AM – Feb. 28, 2012, 9:12 AM

  Authors

  • Mark Winkler

    • Massachusetts Institute of Technology

  • Daniel Recht

    • Harvard University
    • Harvard School of Engineering and Applied Sciences

  • Jacob Krich

    • Harvard University, Department of Chemistry and Chemical Biology
    • Harvard University

  • Michael Aziz

    • Harvard School of Engineering and Applied Sciences
    • Harvard University

  • Tonio Buonassisi

    • Massachusetts Institute of Technology
    • Department of Mechanical Engineering, Massachusetts Institute of Technology

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• Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon

  ORAL

  Feb. 28, 2012, 9:12 AM – Feb. 28, 2012, 9:24 AM

  Authors

  • Matthew DeNinno

    • Michigan State University

  • Morewell Gasseller

    • Michigan State University

  • James Harrison

    • Michigan State University

  • Stuart Tessmer

    • Michigan State University

  • Sven Rogge

    • Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales

  • Roger Loo

    • IMEC, Belgium

  • Matty Caymax

    • IMEC, Belgium

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• Charge States of Individual Group V Donors on n-doped Si(111)-(2x1) Surface

  ORAL

  Feb. 28, 2012, 9:24 AM – Feb. 28, 2012, 9:36 AM

  Authors

  • Veronika Brazdova

    • University College London

  • Philipp Studer

    • University College London

  • Cyrus F. Hirjibehedin

    • University College London

  • Steven Schofield

    • University College London

  • Neil J. Curson

    • University College London

  • David R. Bowler

    • University College London

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• First-principles calculations for Er impurities in Si

  ORAL

  Feb. 28, 2012, 9:36 AM – Feb. 28, 2012, 9:48 AM

  Authors

  • Lars Bjaalie

    • Materials Department, University of California, Santa Barbara

  • Lars Ismer

    • Materials Department, University of California, Santa Barbara

  • Anderson Janotti

    • University of California, Santa Barbara
    • Materials Department, University of California Santa Barbara
    • Materials Department, University of California, Santa Barbara
    • Materials Department, University of California at Santa Barbara

  • C.G. Van de Walle

    • Materials Department, University of California, Santa Barbara
    • Materials Department, University of California Santa Barbara
    • University of California, Santa Barbara
    • Materials Department, University of California Santa Barbara, CA 93106-5050
    • Materials Department, University of California at Santa Barbara
    • Materials Department, University of California, Santa Barbara, California, CA

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• Deactivation of deep level impurities in hyperdoped silicon

  ORAL

  Feb. 28, 2012, 9:48 AM – Feb. 28, 2012, 10:00 AM

  Authors

  • Christie Simmons

    • University of Wisconsin - Madison / Currently: Massachusetts Institute of Technology
    • Massachusetts Institute of Technology

  • Mark Winkler

    • Massachusetts Institute of Technology

  • Joseph Sullivan

    • Massachusetts Institute of Technology
    • Department of Mechanical Engineering, Massachusetts Institute of Technology

  • Daniel Recht

    • Harvard University
    • Harvard School of Engineering and Applied Sciences

  • Michael Aziz

    • Harvard School of Engineering and Applied Sciences
    • Harvard University

  • Tonio Buonassisi

    • Massachusetts Institute of Technology
    • Department of Mechanical Engineering, Massachusetts Institute of Technology

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• Single crystal silicon hyperdoped with transition metals

  ORAL

  Feb. 28, 2012, 10:00 AM – Feb. 28, 2012, 10:12 AM

  Authors

  • Daniel Recht

    • Harvard University
    • Harvard School of Engineering and Applied Sciences

  • Matthew Smith

    • Massachusetts Institute of Technology

  • Joseph Sullivan

    • Massachusetts Institute of Technology

  • Supakit Charnvanichborikarn

    • Australian National University

  • Mark Winkler

    • Massachusetts Institute of Technology

  • James Williams

    • Australian National University

  • Tonio Buonassisi

    • Massachusetts Institute of Technology

  • Silvija Gradecak

    • Massachusetts Institute of Technology

  • Michael Aziz

    • Harvard University

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• Theoretical and Experimental Framework of an Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon

  ORAL

  Feb. 28, 2012, 10:12 AM – Feb. 28, 2012, 10:24 AM

  Authors

  • Elif Ertekin

    • University of Illinois

  • Mark Winkler

    • Massachusetts Institute of Technology

  • Daniel Recht

    • Harvard University

  • Aurore Said

    • Harvard University

  • Michael Aziz

    • Harvard University

  • Tonio Buonassisi

    • Massachusetts Institute of Technology

  • Jeffrey Grossman

    • Massachusetts Institute of Technology

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• Optical Absorption Mechanisms in Sulfur Hyper-doped Silicon

  ORAL

  Feb. 28, 2012, 10:24 AM – Feb. 28, 2012, 10:36 AM

  Authors

  • Joseph Sullivan

    • Massachusetts Institute of Technology
    • Department of Mechanical Engineering, Massachusetts Institute of Technology

  • Daniel Recht

    • Harvard University
    • Harvard School of Engineering and Applied Sciences

  • Christie Simmons

    • Department of Mechanical Engineering, Massachusetts Institute of Technology

  • Michael Aziz

    • Harvard School of Engineering and Applied Sciences
    • Harvard University

  • Tonio Buonassisi

    • Massachusetts Institute of Technology
    • Department of Mechanical Engineering, Massachusetts Institute of Technology

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• Atomistic study of heavy doping in Si nanowires

  ORAL

  Feb. 28, 2012, 10:36 AM – Feb. 28, 2012, 10:48 AM

  Authors

  • Mahesh Neupane

    • University of California, Riverside, CA 92506

  • Rajib Rahman

    • Sandia National Laboratories
    • Sandia National Laboratories, Albuquerque, NM 87185, USA

  • Roger Lake

    • University of California, Riverside, CA 92506
    • Dept of Electrical Engineering, Univ of California Riverside

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• Femtosecond-laser hyperdoping: controlling sulfur concentrations in silicon for band gap engineering

  ORAL

  Feb. 28, 2012, 10:48 AM – Feb. 28, 2012, 11:00 AM

  Authors

  • Meng-Ju Sher

    • Harvard University

  • Mark Winkler

    • Harvard University

  • Yu-Ting Lin

    • Harvard University

  • Benjamin Franta

    • Harvard University

  • Eric Mazur

    • Harvard University

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