Tuning the Electrical Properties of Large Area Graphene through Boron-Nitrogen Co-Doping

We report on investigation of low temperature electrical transport measurements of B and N co-doped graphene layers C (B, N). We find that the temperature dependence of resistance (5K $<$ T $<$ 400 K) of pure graphene shows a metallic behavior, whereas the C (B, N) samples show an increasingly semiconducting behavior with increasing doping levels. Within the studied temperature range, at higher temperatures, the doped samples showed a band-gap dominated Arrhenius-like temperature dependence. At the lowest temperatures, the temperature dependence deviates from an activated behavior, and presents evidence for a conduction mechanism that is consistent with Mott's 2D-Variable Range Hopping (2D-VRH).