Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

ORAL

Abstract

We report observations of well developed half integer quantum Hall effect on mono layer graphene films of 7 mm by 7 mm in size. The graphene films are grown by chemical vapor deposition on copper, then transferred to SiO$_{2}$/Si substrates, with typical carrier mobilities $\approx $4000 cm$^{2}$/Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards, and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene.

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Authors

  • Tian Shen

    • Department of Physics, Purdue University/National Institute of Standards and Technology

  • Wei Wu

    • Center for Advanced Materials and ECE, University of Houston

  • Qingkai Yu

    • Center for Advanced Materials and ECE, University of Houston

  • Curt Richter

    • Semiconductor and Dimensional Metrology Div., NIST
    • Semiconductor and Dimensional Metrology Div, NIST Gaithersburg, MD
    • National Institute of Standards and Technology

  • Randolph Elmquist

    • National Institute of Standards and Technology

  • David Newell

    • National Institute of Standards and Technology

  • Yong Chen

    • Purdue University
    • Physics department, Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907
    • Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907
    • Department of Physics, Purdue University