Bolometric photo response of dual-gated bilayer graphene
ORAL
Abstract
We study the photo response of dual-gated bilayer graphene devices under infrared radiation. By comparison to Joule heating measurements using a second harmonic transport technique, we determine that the photo response is bolometric instead of photoconductive. The measured large electron-phonon heat resistance of our device is in good agreement with theoretical estimates in magnitude and temperature dependence, and enables our graphene bolometer operating at a temperature of 5 K to have a low noise equivalent power (33 fW/Hz$^{1/2}$) and fast response time (sub nanosecond).
*This work is supported by IARPA, the ONR MURI program, and NSF grants DMR-0804976 and DMR-1105224. J.A.E. and H.M.M. acknowledge the support of NSF.
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Authors
Jun Yan
Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park
M.-H. Kim
Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park
J.A. Elle
Institute for Research in Electronics and Applied Physics, and Department of Physics, University of Maryland, College Park
A.B. Sushkov
Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park
G.S. Jenkins
Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park
H.M. Milchberg
Institute for Research in Electronics and Applied Physics and Department of Physics, University of Maryland, College Park
H.D. Drew
Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park
M.S. Fuhrer
Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park
