A graphene photodetctor device is fabricated using mechanically exfoliated single layer graphene on SiO2/Si substrate contacted by two dissimilar metal electrodes (chromium and gold) using standard electron beam lithography. The graphene is etched into a strip shape with specific width and coupled to a bow tie antenna structure to improve coupling to long-wavelength radiation and enhance the electric field in the center of the device. We have observed the response of the graphene photodetector to optical (632.8nm) and infrared laser (118um) radiation as a function of gate voltage and device width. Experimental results and comparison to a model of graphene plasmon-enhanced photodetction will be discussed.
*This work is supported by CNAM, IARPA, the ONR MURI program, and NSF grants DMR-0804976 and DMR-1105224.
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Authors
Xinghan Cai
Center for Nanophysics and Advanced Materials, University of Maryland, College Park
Greg Jenkins
Center for Nanophysics and Advanced Materials, University of Maryland, College Park
Andrei Sushkov
Department of Physics, University of Maryland, College Park, MD 20742
MRSEC and CNAM, Department of Physics, University of Maryland
Department of Physics, University of Maryland, College Park, MD 20742, USA
Center for Nanophysics and Advanced Materials, University of Maryland, College Park
Jun Yan
Center for Nanophysics and Advanced Materials, University of Maryland, College Park
Dennis Drew
Center for Nanophysics and Advanced Materials, University of Maryland, College Park
CNAM, Physics Department, Universtity of Maryland
Michael S. Fuhrer
Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742, USA
University of Maryland
Center for Nanophysics and Advanced Materials, University of Maryland, College Park
