Grain Boundaries In Thin Film Organic Semiconductors

ORAL

Abstract

We utilize conductive atomic force microscopy (C-AFM) and tunneling atomic force microscopy (TUNA) to characterize dynamics of electronic transport across fluorinated triethylsilylethynyl anthradithiophene (diF-TES ADT) grain boundaries. The crystallization of diF-TES ADT grown on SiO$_{2}$ will be discussed and related to comparable molecules. The resulting voltage drop between individual crystals as a function of dopants will be discussed in terms of charge transport models and compared to current device work.

*This research is supported by the Ralph E. Powe Junior Faculty Enhancement Award, Appalachian State University, the Appalachian State University Office of Student Research, and the NC Space Grant Consortium

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Authors

  • Cortney Bougher

    • Appalachian State University

  • Shawn Huston

    • Appalachian State University

  • Eitan Lees

    • Appalachian State University

  • Jeremy Ward

    • Wake Forest University

  • Abdul Obaid

    • Wake Forest University

  • Marsha Loth

    • University of Kentucky

  • John Anthony

    • University of Kentucky

  • Oana Jurchescu

    • Wake Forest University

  • Brad Conrad

    • Appalachian State University