Fabrication of Bismuth Selenide Topological Insulating Samples

ORAL

Abstract

In this talk, I will discuss fabrication of nanometric topological insulator Bi$_{2}$Se$_{3}$ devices. Our group uses two fabrication methodologies: Epitaxial thin films and single crystal exfoliation. I will discuss the benefits and drawbacks of each methodology. I will also address the effects on device performance by various steps of the fabrication process.

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Authors

  • Lucas Orona

    • MIT

  • H. Steinberg

    • MIT
    • Department of Physics, MIT, Cambridge, USA

  • V. Fatemi

    • MIT
    • Department of Physics, MIT
    • Department of Physics, MIT, Cambridge, USA

  • F. Katmis

    • MIT, Francis Bitter Magnet Lab
    • Francis Bitter Magnet Lab, MIT, Cambridge, MA
    • MIT
    • Department of Physics, MIT, Cambridge, USA

  • Jagadeesh S. Moodera

    • Massachusetts Institute of Technology
    • MIT, Francis Bitter Magnet Lab
    • Francis Bitter Magnet Lab and Physics Department, MIT, Cambridge, MA
    • MIT
    • Department of Physics, MIT, Cambridge, USA
    • Francis Bitter Magnet Lab.
    • FBML and Physics Dept., MIT

  • Pablo Jarillo-Herrero

    • MIT
    • Massachusetts Institute of Techology
    • Physics Department, MIT, Cambridge, MA
    • Department of Physics, MIT, Cambridge, USA
    • Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
    • Massachusetts Institute of Technology