MBE growth and transport of the topologically tunable (Bi$_{1-x}$ In $_{x})_{2}$Se$_{3}$ system

ORAL

Abstract

A current challenge in the field of topological insulators (TI) is identifying a clear transport signal of the surface conduction. The structural similarity between Bi$_{2}$Se$_{3}$ and In$_{2}$Se$_{3}$ allowed us to combine the two to obtain (Bi$_{1-x}$ In $_{x})_{2}$Se$_{3}$; Bi$_{2}$Se$_{3}$ has inverted bands, and thus is a non-trivial insulator. In$_{2}$Se$_{3}$ has no inverted bands and is therefore a trivial band insulator with energy gap 1.3-1.9eV. The mixing ratio x can be thought of as a knob to switch the system from a trivial to a non-trivial state. I will briefly discuss our scheme for producing atomically smooth molecular beam epitaxial grown thin films. I will also discuss our work on transport in the TI-to-non TI regime, and the metal to insulator regime, and compare these results with angle resolved photo emission spectroscopy data.

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Authors

  • Matthew Brahlek

    • Rutgers University-Department of Physics and Astronomy
    • Rutgers, The State University of New Jersey
    • Rutgers University
    • Rutgers University Physics and Astronomy

  • Namrata Bansal

    • Rutgers, The State University of New Jersey
    • Rutgers University Physics and Astronomy

  • Nikesh Koirala

    • Rutgers University Physics and Astronomy

  • Suyang Xu

    • Princeton University Physics

  • M. Zahid Hasan

    • Princeton University
    • Dept. of Physics, Princeton University, Princeton, NJ 08544
    • Princeton University Physics
    • Joseph Henry Laboratory and Dept. of Physics, Princeton University

  • Seongshik Oh

    • Rutgers University
    • Rutgers University Physics and Astronomy