Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

ORAL

Abstract

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

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Authors

  • Jian Zhu

    • University of California, Irvine

  • Jordan Katine

    • Hitachi Global Storage Technologies

  • Graham Rowlands

    • University of California, Irvine

  • Yu-Jin Chen

    • University of California, Irvine

  • Zheng Duan

    • University of California, Irvine

  • Juan Alzate

    • University of California, Los Angeles

  • Pramey Upadhyaya

    • University of California, Los Angeles

  • Juergen Langer

    • Singulus Technologies

  • Pedram Khalili Amiri

    • University of California, Los Angeles

  • Kang Wang

    • University of California, Los Angeles

  • Ilya Krivorotov

    • University of California, Irvine