Perpendicular magnetization of CoFeGe alloy films induced by MgO interface

ORAL

Abstract

The perpendicular magnetization of CoFeGe alloy films was achieved in the structures of CoFeGe/MgO with the perpendicular magnetic anisotropy energy density ($K_{u})$ of $\sim $ 1 x 10$^{6 }$erg/cm$^{3}$. The CoFeGe thickness dependence of $K_{u}$ was investigated, indicating that the perpendicular anisotropy of CoFeGe is contributed by the interfacial anisotropy between CoFeGe and MgO. High-resolution transmission electron microscope images clearly show formation of bcc crystalline structure of CoFeGe well lattice matched with the (100)-oriented MgO barrier. Gilbert damping constant for the films was evaluated by using ferromagnetic resonance measurement.

*Acknowledge for the financial support from Defense Advanced Research Projects Agency (DARPA).

Authors

  • Manli Ding

    • Physics Department, University of Virginia
    • University of Virginia
  • Sebastian Schafer

    • University of Alabama
  • Xiaopu Li

    • University of Virginia
  • Tim Mewes

    • University of Alabama
  • Joseph Poon

    • Physics Department, University of Virginia
    • University of Virginia