A Full electric-field tuning of thermoelectric power in a dual-gated Bi-layer graphene device

ORAL

Abstract

By using high quality microcrystals of hexagonal boron nitride as top gate dielectric, we fabricated dual-gated bilayer graphene devices. We demonstrate a full electric field tuning of thermoelectric power resulting from the opening of a band-gap by applying a perpendicular electric field on bilayer graphene. We uncover a large enhancement in thermoelectric power at low temperature. At 15 K, the thermoelectric power can be amplified by more than four-fold attaining a value of $\sim$ 50$\mu$V/K at a displacement field of 0.8 V/nm. Our result may open up a new possibility in thermoelectric application using graphene-based device.

*This work is supported by NSC Taiwan NSC99-2112-M-001-032-MY3

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Authors

  • Wei-Li Lee

    • Institute of Physics, Academia Sinica
    • Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan R.O.C.
    • Institute of Physics, Academia Sinica, Taipei, Taiwan

  • Chang-Ran Wang

    • Institute of Physics, Academia Sinica, Taipei, Taiwan

  • Wen-Sen Lu

    • Institute of Physics, Academia Sinica, Taipei, Taiwan

  • Lei Hao

    • Institute of Physics, Academia Sinica, Taipei, Taiwan

  • Ting-Kuo Lee

    • Institute of Physics, Academia Sinica, Taipei, Taiwan

  • Feng Lin

    • Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

  • I-Chun Cheng

    • Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

  • Jiang-Zhang Chen

    • Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan