Transport in high-mobility mesoscale graphitic devices

ORAL

Abstract

Recent advances in graphene fabrication have allowed for high-mobility structures to be created. We report on the fabrication and measurement of mesoscale devices of graphene on boron-nitride. We present the details by which graphene is transferred on to boron-nitride substrates, where we observed enhanced mobility over similar devices fabricated on silicon dioxide substrates. Transport measurements at low temperature are described with focus given to reconfigurable, mesoscale devices in graphene.

*This work is supported by FENA, an FCRP center based at UCLA, and the Center for Probing the Nanoscale at Stanford University, an NSF NSEC.

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Authors

  • Andrei Garcia

    • Applied Physics Department, Stanford University

  • Francois Amet

    • Stanford University
    • Applied Physics Department, Stanford University

  • James Williams

    • Stanford University
    • Physics Department, Stanford University

  • David Goldhaber-Gordon

    • Stanford University
    • Physics Department, Stanford University