Magnetic Field Effect on the In-plane Electrical Resistivity of FeTe$_{1-x}$Se$_x$ Single Crystals

ORAL

Abstract

The in-plane electrical resistivity ($\rho_{ab}$) of FeTe$_{1- x}$Se$_x$ single crystals is measured as a function of temperature (T), magnetic field (H), and the angle ($\theta$) between H and electric current (I). The results reveal that $\rho_{ab}$ strongly depends on both H and $\theta$, indicating the participation of spin scattering in the electrical transport. The underlying physics will be discussed.

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Authors

  • Yimin Xiong

    • Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803-4001

  • Amar Karki

    • Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803-4001

  • Brian Sales

    • Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831

  • Rongying Jin

    • Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803-4001