Disorder Effect of Quantum Anomalous Hall effect in Graphene

ORAL

Abstract

We investigate the possibility of realizing quantum anomalous Hall effect in graphene. We show that a bulk energy gap can be opened in the presence of both Rashba spin-orbit coupling and an exchange field. We calculate the Berry curvature distribution and find a nonzero Chern number for the valence bands and demonstrate the existence of gapless edge states. Inspired by this finding, we also study, by first-principles method, a concrete example of graphene with Fe atoms adsorbed on top, obtaining the same result. We further study the disorder effect of this quantum anomalous Hall effect and show how this state is localized in the presence of strong disorders.

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Authors

  • Zhenhua Qiao

    • The University of Texas at Austin

  • Shengyuan A. Yang

    • The University of Texas at Austin

  • Wang-Kong Tse

    • The University of Texas at Austin

  • Yugui Yao

    • Institue of Physics, Chinese Academy of Sciences, China

  • Jian Wang

    • The University of Hong Kong

  • Qian Niu

    • The University of Texas at Austin