Electronic structure of the side surface of Bi$_{2}$Se$_{3}$

ORAL

Abstract

We investigate the electronic band structure of a side surface geometry, other than the conventional [111] surface, of the topological insulator Bi$_{2}$Se$_{3}$ using the first-principles pseudopotential calculations. As Bi$_{2}$Se$_{3}$ is known to be a strong topological insulator, it is expected that an arbitrary surface would have the topological surface state characterized by Dirac-cone-like band dispersion and spin-momentum coupling. Here we indeed obtain surface states with linear band dispersion around the Gamma point, but with a strong anisotropy with different group velocities along different k-directions. Low energy effective hamiltonian is proposed, and physical implications of the anisotropic Dirac fermions are also discussed.

*This work was supported by NRF of Korea (Grant No. 2009-0081204) and KISTI Supercomputing Center (Project No. KSC-2008-S02-0004).

Authors

  • Chang-Youn Moon

    • Department of Physics and IPAP, Yonsei University, Korea
  • Jinhee Han

    • Department of Physics and IPAP, Yonsei University, Korea
  • Hyungjun Lee

    • Department of Physics and IPAP, Yonsei University, Korea
  • Hyoung Joon Choi

    • Department of Physics and IPAP, Yonsei University, Korea