Fractional quantum Hall effect in graphene on boron nitride

ORAL

Abstract

Graphene is a remarkable 2D material exhibiting many unique and surprising many-body effects resulting from strong electron interactions. A continuing challenge remains the fabrication of ultra-high mobility devices that allow the intrinsic character of graphene to be fully explored. In my talk I will discuss our recent advancements in fabricating very-high quality graphene devices on boron nitride. Magnetoresistance measurements under very large applied fields will be presented including our recent observation of the fractional quantum Hall effect in multi-terminal devices over a broad range of carrier densities.

–

Authors

  • Cory Dean

    • Columbia University, Electrical Engineering \& Mechanical Engineering

  • Andrea Young

    • Columbia University, Department of Physics

  • Paul Cadden-Zimansky

    • Columbia University, Department of Physics

  • Lei Wang

    • Columbia University, Electrical Engineering

  • Hechen Ren

    • Columbia University, Department of Physics

  • Kenji Watanabe

    • Advanced Materials Laboratory, National Institute for Materials Science, Japan

  • Takashi Taniguchi

    • Advanced Materials Laboratory, National Institute for Materials Science

  • Philip Kim

    • Columbia University, Department of Physics

  • James Hone

    • Columbia University, Mechanical Engineering

  • Ken Shepard

    • Columbia University, Electrical Engineering