Study of the interface of supercondutor and topological insulator

ORAL

Abstract

State-of-art Molecular beam epitaxy (MBE) has been carried out to grow high quality topological insulator (TI) films on some BCS s-wave superconductor (SC) substrates. The growth dynamics and the electronics structures of the SC/TI interface were studied using high energy reflected electron diffraction and ultralow-temperature scanning tunneling microscopy (STM). Electronic structure, superconducting gap, vortex dynamics would be reported in this presentation. The superconducting state of the topological insulator due to approximate effect and the formation of Majorana Fermion would be discussed.

Authors

  • Dong Qian

    • Shanghai Jiao Tong University
  • Xiaomei Wang

    • Shanghai Jiao Tong University
  • Chunlei Gao

    • Shanghai Jiao Tong University
  • Canhua Liu

    • Shanghai Jiao Tong University
  • Jinfeng Jia

    • Shanghai Jiao Tong University