Optical characterization of p-doped InP epitaxial layers in mid and far infrared region

ORAL

Abstract

The optical properties of p-doped Indium Phosphide (InP) epitaxial thin films with 1, 3, and 24 $\times $ 10$^{18}$ cm$^{-3}$ carrier concentrations were investigated by infrared reflection, transmission, and absorption measurements in 5 - 40 $\mu $m wavelength range. The absorption spectra were modeled by complex dielectric function using the classical Lorentz--Drude model. The phonon absorption in InP was modeled using eight Lorentzian oscillators. This method gives a straightforward approach for modeling the experimental absorption spectra when compared to the two-phonon absorption spectroscopy technique. The calculated spectra are in a good agreement with experimental spectra. The effects of doping on fitting parameters are also investigated.

*This work was supported in part by the US Army Research Office under Grant No. W911NF-08-1-0448 monitored by Dr. William Clark and Georgia Research Alliance under grant GRAUP

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Authors

  • R.C. Jayasinghe

    • Georgia State University

  • Y.F. Lao

    • Georgia State University

  • A.G.U. Perera

    • Georgia State University

  • M. Hammar

    • Royal Institute of Technology, Kista, Sweden

  • C.F. Cao

    • Chinese Academy of Sciences, Shanghai, China

  • H. Wu

    • Zhejiang University, Hangzhou, China