Electronic Transport Properties of Graphene on Aluminum Nitride

ORAL

Abstract

We have fabricated graphene field-effect transistors on aluminum nitride (AlN) gate dielectric over silicon back gates. AlN thin films are prepared on Si by pulsed laser deposition, and exfoliated graphene on SiO2 is transferred onto the AlN/Si surface by using thermal tape as a transfer medium. After transfer, Raman spectra and AFM measurement have been performed to confirm the quality of graphene on AlN. Electron transport measurements will be reported.

*This work is supported by the Laboratory for Physical Sciences

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Authors

  • Liang Li

    • Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742-4111, USA

  • Jun Yan

    • Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742-4111, USA
    • Center for Nanophysics and Advanced Materials, Univesity of Maryland

  • R.D. Vispute

    • Blue Wave Semiconductors, Inc.

  • Michael Fuhrer

    • University of Maryland
    • Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742-4111, USA
    • Center for Nanophysics and Advanced Materials, University of Maryland, College Park
    • Center for Nanophysics and Advanced Materials, Univesity of Maryland
    • Materials Research Science and Engineering Center and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland
    • Dept. of Physics, Materials Research Science and Engineering Center and Center for Nanophysics and Advanced Materials, Univ. of Maryland, College Park