Pristine graphene is a zero-bandgap semiconductor. Usually no photoluminescence can be observed from such zero-bandgap material upon laser excitation. In highly doped graphene, however, we observed a strong broadband photoluminescence. We will discuss the mechanism of this photoluminescence in graphene, which arises from new recombination pathways enabled by strong electrical doping. We will also describe the polarization dependence of this newly observed photoluminescence.
–
Authors
Baisong Geng
Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
Chi-Fan Chen
Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
Liang Zheng Tan
Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
Bryan W. Boudouris
Department of Chemistry, University of California at Berkeley, Berkeley, CA 94720, USA
Jason Horng
Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
Caglar Girit
Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
Alex Zettl
Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
Michael F. Crommie
Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
Rachel Segalman
Department of Chemistry, University of California at Berkeley, Berkeley, CA 94720, USA
Steve G. Louie
Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
Feng Wang
Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
