Electrical spin injection and detection in Si

ORAL

Abstract

We report electrical spin injection from Fe into Si in a Fe/MgO/Si tunnel diode grown by molecular beam epitaxy. Incorporating the spin-degree of freedom into Si adds significant new functionality in a system with established utility. In addition, the use of spin as an intrinsically quantum mechanical degree of freedom may enable more speculative computing paradigms such as spin-based quantum computation. In this work, we investigate spin injection and spin detection and spin-related transport properties in Si. This work also lays the foundation for ongoing studies correlating structural, electronic and magnetic device properties with spin injection efficiency, spin transport mechanism and real-space imaging of spin transport.

*Funding for this research was provided by the Center for Emergent Materials at the Ohio State University, an NSF MRSEC (Award Number DMR-0820414).

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Authors

  • Yong Pu

    • Center for Emergent Materials/Department of Physics, Ohio State University

  • Adrian Swartz

    • Department of Physics and Astronomy, University of California-Riverside

  • Jonas Beardsley

    • Center for Emergent Materials/Department of Physics, Ohio State University

  • Vydia Bhallamudi

    • Center for Emergent Materials/Department of Physics, Ohio State University

  • Chris Hammel

    • Center for Emergent Materials/Department of Physics, Ohio State University

  • Roland Kawakami

    • Center for Emergent Materials/Department of Physics, Ohio State University

  • Ezekiel Johnston-Halperin

    • Center for Emergent Materials/Department of Physics, Ohio State University

  • Jon Pelz

    • Center for Emergent Materials/Department of Physics, Ohio State University