Electrical spin injection to Germanium using a single crystalline Fe/MgO/Ge tunneling junction

ORAL

Abstract

Germanium has long been predicted a superior candidate for spintronics with enhanced spin lifetime and transport length due to low spin--orbit interaction and lattice inversion symmetry. One of the critical challenges, however, is to electrically create spin accumulation in otherwise non-magnetic Ge. In this work, we report electrical spin injection to bulk n-type Ge using a single crystalline Fe/MgO/Ge tunneling junction. The spin lifetime and diffusion length are extracted from both 3-terminal Hanle measurement and non-local spin valve measurement. The spin relaxation mechanism in n-type Ge has also been explicitly analyzed from the bias and temperature dependence of the spin relaxation rate.

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Authors

  • Yi Zhou

    • University of California, Los Angeles

  • Li-Te Chang

    • University of California, Los Angeles

  • Wei Han

    • University of California, Riverside

  • Faxian Xiu

    • University of California, Los Angeles

  • Minsheng Wang

    • University of California, Los Angeles

  • Michael Oehme

    • Universitaet Stuttgart

  • Joerg Schulze

    • Universitaet Stuttgart

  • Alexandros Shailos

    • California Nano System Institute

  • Roland Kawakami

    • University of California, Riverside

  • Kang Wang

    • University of California, Los Angeles