Templated graphene nanoribbon growth on SiC

ORAL

Abstract

We demonstrate a photo-lithography fabrication method of graphene nanoribbon. Epitaxial graphene is grown selectively on SiC (1-10n) facets. For this, SiC is patterned to define 3-dimensional structures. Epitaxial graphene nanoribbons grow preferentially on the exposed sidewalls recrystallized facets that avoids post-processing lithography damage of graphene ribbons. Graphene ribbons narrower than 30nm were produced with this method and all-graphene interconnected structures are fabricated. Metal contacts are evaporated on large graphene areas seamlessly connected to nanoribbons. Transport measurement shows gap opening and high mobility. SiC crystal faceting was also explored. Low index crystal facets where found to be energetically favored.

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Authors

  • Ming Ruan

    • Georgia Institute of Technology

  • Michael Sprinkle

    • Georgia Institute of Technology
    • School of Physics, Georgia Institute of Technology

  • Yike Hu

    • Georgia Institute of Technology

  • John Hankinson

    • Georgia Institute of Technology
    • School of Physics, Georgia Institute of Technology

  • Miguel Rubio-Roy

    • Georgia Institute of Technology

  • Baiqian Zhang

    • Georgia Institute of Technology
    • School of Physics, Georgia Institute of Technology

  • Rui Dong

    • Georgia Institute of Technology

  • Zelei Guo

    • Georgia Institute of Technology
    • Georgia Tech

  • Claire Berger

    • Georgia Institute of Technology \& CNRS- Institut N\'eel
    • School of Physics, Georgia Institute of Technology; Institut N\'eel, CNRS, Grenoble, France
    • Georgia Tech

  • Walt de Heer

    • Georgia Institute of Technology
    • School of Physics, Georgia Institute of Technology