Imaging the first few layers of Multilayer Epitaxial Graphene grown on SiC ($000\overline 1 )$

Multilayer Epitaxial Graphene (MEG) grown on the C-terminated ($000\overline 1 )$ face of SiC has been shown to behave as a series of nearly independent graphene sheets, distinguishing it from few-layer graphite. We present photoemission data from MEG films of 10 {\AA} or less, finding that the first few graphene layers on top of SiC are easily visible and are n-doped in a similar fashion to graphene grown on the Si-terminated face. Combined with the characteristic diversity of rotations in MEG films, we have obtained numerous different combinations of cone doping and rotation angles, allowing us to explore a variety of phenomena associated with the graphene-SiC interface interaction. We find that, unlike similarly-doped graphene grown on the Si-terminated face, there exists no large mismatch between the conduction and valence bands. Other potential effects of the substrate are discussed, as well as efforts in modifying the graphene-SiC interface.