Novel Resistive Switching Behavior in Phase Separated Manganites

ORAL

Abstract

Electronic phase separation plays a key role in many novel phenomena in complex materials. Manganites are a prime example of this class of materials and have recently come under increase scrutiny for possible application in resistive random-access memory (RRAM) technology. Here, we will discuss our recent work on spatially confined La5/8-xPrxCa3/8MnO3. We have discovered that it is possible to drive single electronic domain formation/annihilation through electric field pulsing. By measuring the I-V curve, we find such resistive switching is different from normal RRAM mechanisms in manganites and is closely related to the nature of electronic phase separation. These findings open these systems to a new understanding of the nature of electronic phase separation and begin the development of manganites for future applications in RRAM devices.

*Research sponsored by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy.

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Authors

  • Hangwen Guo

    • The University of Tennessee, Knoxville \& Oak Ridge National Laboratory
    • The University of Tennessee / Oak Ridge National Laboratory

  • T. Zac Ward

    • Oak Ridge National Lab
    • Oak Ridge National Laboratory

  • Dali Sun

    • Oak Ridge National Laboratory

  • Paul C. Snijders

    • Oak Ridge National Lab
    • Oak Ridge National Laboratory

  • Zheng Gai

    • Oak Ridge National Lab
    • Oak Ridge National Laboratory \& Center for Nanophase Materials Science
    • Oak Ridge National Laboratory

  • Jian Shen

    • Oak Ridge National Lab
    • The University of Tennessee, Knoxville \& Fudan University
    • University of Tennessee \& Fudan University
    • The University of Tennessee / Fudan University
    • Fudan University; The University of Tennessee