High yield assembly and electron transport investigation of semiconducting-rich local-gated single-walled carbon nanotube field effect transistors

ORAL

Abstract

Single-walled carbon nanotubes (SWNTs) are ideal for use in nanoelectronic devices because of their high current density, mobility and subthreshold slope. Using individual local gates and scaling the gate oxide has shown faster switching behavior and lower power consumption. However, assembly methods must be developed to reproducibly align all-semiconducting SWNTs at specific locations with individually addressable gates for future integrated circuits. We show high yield assembly of local-gated semiconducting SWNTs assembled via AC-dielectrophoresis (DEP). Detailed electron transport investigations on the devices show that 98{\%} display good FET behavior, with an average threshold voltage of 1V and subthreshold swing as low as 120 mV/dec.

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Authors

  • Kristy Kormondy

    • Nanoscience Technology Center and Department of Physics, University of Central Florida, Orlando, Florida, 32826

  • Paul Stokes

    • Nanoscience Technology Center and Department of Physics, University of Central Florida, Orlando, Florida, 32826

  • Saiful Khondaker

    • Nanoscience Technology Center, Department of Physics, and School of Electrical Engineering and Computer Science, University of Central Florida
    • Nanoscience Technology Center, Department of Physics, Department of Chemistry, University of Central Florida, Orlando, Florida 32826
    • University of Central Florida
    • NanoScience Technology Center and Department of Physics, University of Central Florida, 12424 Research Parkway, Orlando, 32826, USA.
    • Nanoscience Technology Center and Department of Physics, University of Central Florida, Orlando, Florida, 32826
    • Nanoscience Technology Center, Department of Physics, University of Central Florida, Orlando, Florida 32826