Radio Frequency Single Electron Transistors on Si/SiGe

ORAL

Abstract

Superconducting single electron transistors (S-SETs) are ideal for charge state readout due to their high sensitivity and low back-action. Upon successful formation of quantum dots(QDs) on Si/SiGe, aluminum S-SETs are added in the vicinity of the QDs. Coupling of the S-SET to the QD is confirmed by using the S-SET to perform sensing of the QD charge state at 0.3 K. We have formed a matching network for an SET with an off-chip inductor. The reflection coefficient of the radio frequency(RF) signal is shown to be modulated by the SET resistance. Efforts to develop an on-chip matching network and perform charge sensing with the RF-SETs are in progress. Recent experimental results will be discussed.

*This research was supported by the NSA, LPS and ARO.

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Authors

  • Mingyun Yuan

    • Department of Physics and Astronomy, Dartmouth College

  • Zhen Yang

    • Department of Physics and Astronomy, Dartmouth College

  • A.J. Rimberg

    • Department of Physics and Astronomy, Dartmouth College

  • Mark Eriksson

    • Department of Physics, University of Wisconsin
    • University of Wisconsin-Madison
    • University of Wisconsin Madison

  • D.E. Savage

    • Material Science Center, University of Wisconsin
    • University of Wisconsin-Madison