Dispersive microwave readout of a double quantum dot charge qubit in silicon

Microwave resonators coupled to quantum systems have been used for fast dispersive measurement in many different architectures in solid state and atomic physics. The electronic states of a semiconductor quantum dot represent a promising candidate for quantum information processing. Our work is geared toward developing a fast, non-demolition readout of semiconductor qubit by coupling to a superconducting resonant circuit. We report on microwave measurements of a lateral quantum dot, realized using a silicon MOSFET structure, where the charge degree of freedom is capacitively coupled to a shorted quarter wave 6 GHz resonator. We characterize the sensitivity of this charge detection scheme and its implications for qubit readout fidelity.