Photoreflectance spectroscopy of single GaAs/GaP Core-shell Nanowires

ORAL

Abstract

We present a direct observation of the light hole (lh) and heavy hole (hh) valence band splitting in highly strained GaAs/GaP core/shell nanowires obtained by photoreflectance (PR) from a single nanowire. The NWs were prepared by Au nanoparticle (100 nm) catalyst-assisted MOCVD growth with two different shell thicknesses, where the induced strain is controlled varying the core/shell ratio. They were then dispersed on silicon for the PR measurement. The spectra show a $\sim $140eV splitting of the lh and hh bands for two different wires. Raman spectroscopy was carried out on the same growths in order to measure the hydrostatic and shear strain [1]. From the measured strain we calculate the hh and lh splitting and find them to be in reasonable agreement with PR. \\[4pt] [1] M. Montazeri, et. al., Nano Letters 10, 880-886 (2010).

*Supported by the NSF (0701703, 0806700, 0806572) and the Australian Research Council.

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Authors

  • J.H. Kang

    • Australian National University

  • A. Wade

    • University of Cincinnati

  • M. Montazeri

    • University of Cincinnati

  • M.A. Fickenscher

    • University of Cincinnati

  • H.E. Jackson

    • University of Cincinnati

  • L.M. Smith

    • University of Cincinnati

  • J.M. Yarrison-Rice

    • Miami University

  • Q. Gao

    • Australian National University

  • H.H. Tan

    • Australian National University

  • C. Jagadish

    • Australian National University