STM study of graphene on boron nitride

ORAL

Abstract

We have performed low-temperature STM topographic and spectroscopic measurements of graphene on h-BN. We found that the topographic variations are reduced as compared to graphene on SiO2. We also performed scanning tunneling spectroscopy measurements to study the spatial variation of the Dirac point. We will present our latest results on the topographic and spectroscopic features for graphene on h-BN and compare them with similar measurements for graphene on SiO2.

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Authors

  • Jiamin Xue

    • Department of Physics, University of Arizona, Tucson, Arizona 85721, USA

  • Danny Bulmash

    • Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

  • Javier Sanchez-Yamagishi

    • Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

  • K. Watanabe

    • Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

  • T. Taniguchi

    • Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

  • Pablo Jarillo-Herrero

    • Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

  • B.J. LeRoy

    • Department of Physics, University of Arizona, Tucson, Arizona 85721, USA