Magnetoresistance in Lateral GaMnAs devices with Nano-constrictions

Mn-doped GaAs (or GaMnAs) offers opportunities to demonstrate both new device concepts with added functionality and new phenomena in condensed matter physics, since it is both a ferromagnet and a semiconductor. We will present our recent results on fabricating and characterizing GaMnAs-based nano- devices. The resistance of these deep-nanoscale devices can be manipulated either by varying the applied voltage or via an external magnetic field. The nano-devices were prepared using electron-beam lithography and wet chemical etching. The magnetoresistance of the devices was as high as 50{\%} at 4.2k and the behavior was different from previous results reported in literature.