Quantum transport in high-quality Bilayer Graphene pnp Junctions
ORAL
Abstract
Using high-quality bilayer grapheme pnp junctions with suspended top gates, we perform transport measurements. At a magnetic field B=0, by an applied perpendicular electric field, band gap opens at 260mK. Within the band gap, we demonstrate the conductance decreases exponentially by 3 orders of magnitude with increasing electric field and this can be explained by variable range hopping with a gate-tunable density of states, effective mass, and localization length.
–
Authors
Yongjin Lee
Department of Physics, University of California, Riverside, California 92521
Lei Jing
Department of Physics, University of California, Riverside, California 92521
Jairo Velasco Jr.
Department of Physics, University of California, Riverside, California 92521
Philip Kratz
Department of Physics, University of California, Riverside, California 92521
Gang Liu
Department of Physics, University of California, Riverside, California 92521
Wenzhong Bao
Department of Physics, University of California, Riverside, California 92521
Marc Bockrath
Department of Physics, University of California, Riverside, California 92521
Chun Ning Lau
Department of Physics, University of California, Riverside, California 92521