Coulomb blockade magnetoresistance in organic spin transport device

ORAL

Abstract

Using buffer-layer-assisted growth, we successfully fabricated organic spin transport devices with a discontinuous granular magnetic layer centered in an organic spacer film. The Coulomb blockade magnetoresistance (MR) effects were observed, as predicted by X.-G. Zhang \textit{et al} (Phys. Rev. B. 81, 155122, 2010). The spin-dependent Coulomb blockade voltage arises from the coupled magnetic dots inside the organic material and correlate with the observed MR effect.

*Research sponsored by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy

–

Authors

  • Dali Sun

    • Oak Ridge National Laboratory

  • X.-G Zhang

    • Oak Ridge National Laboratory

  • Paul C. Snijders

    • Oak Ridge National Lab
    • Oak Ridge National Laboratory

  • Hangwen Guo

    • The University of Tennessee, Knoxville \& Oak Ridge National Laboratory
    • The University of Tennessee / Oak Ridge National Laboratory

  • Zheng Gai

    • Oak Ridge National Lab
    • Oak Ridge National Laboratory \& Center for Nanophase Materials Science
    • Oak Ridge National Laboratory

  • T. Zac Ward

    • Oak Ridge National Lab
    • Oak Ridge National Laboratory

  • Jian Shen

    • Oak Ridge National Lab
    • The University of Tennessee, Knoxville \& Fudan University
    • University of Tennessee \& Fudan University
    • The University of Tennessee / Fudan University
    • Fudan University; The University of Tennessee