Focus Session: Dopants and Defects in Semiconductors: Silicon
FOCUS · H12 ·
Presentations
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Isotopic Fingerprints in the Luminescence of Deep Defects in Silicon
COFFEE_KLATCH · Invited
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Authors
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Michael L.W. Thewalt
- Simon Fraser University
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Theoretical study of the Cu$_{\rm PL}$ defect in Si
ORAL
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Authors
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Alexandra Carvalho
- University of Aveiro
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Stefan K. Estreicher
- Texas Tech University
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EPR parameters of the dangling bond defect in crystalline and amorphous silicon: A DFT-study
ORAL
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Authors
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Gernot Pfanner
- Max-Planck-Institut fuer Eisenforschung, Duesseldorf, Germany
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Christoph Freysoldt
- Max-Planck-Institut fuer Eisenforschung, Duesseldorf, Germany
- MPIE D\"usseldorf
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Joerg Neugebauer
- Max-Planck-Institut fuer Eisenforschung, Duesseldorf, Germany
- MPIE D\"usseldorf
- Dept. for Computational Materials Design, Max-Planck-Institut fuer Eisenforschung GmbH, Duesseldorf, Germany
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Electrically Detected Pulsed ENDOR in Phosphorus-Doped Silicon
ORAL
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Authors
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Felix Hoehne
- Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany
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Lukas Dreher
- Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany
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Hans Huebl
- Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Strasse 8, 85748 Garching, Germany
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Martin Stutzmann
- Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany
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Martin S. Brandt
- Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany
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Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon
ORAL
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Authors
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Lukas Dreher
- Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany
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Timon A. Hilker
- Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany
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Andreas Brandlmaier
- Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Strasse 8, 85748 Garching, Germany
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Sebastian T.B. Goennenwein
- Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Strasse 8, 85748 Garching, Germany
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Hans Huebl
- Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Strasse 8, 85748 Garching, Germany
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Martin Stutzmann
- Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany
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Martin S. Brandt
- Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany
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Characterizing Individual Group V donors in Silicon
ORAL
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Authors
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Philipp Studer
- London Ctr. Nanotech. and Dept. Electron. \& Elec., UCL, London, UK
- UCL, UK
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Cyrus F. Hirjibehedin
- UCL, UK
- London Ctr. Nanotech., Dept. Phys. \& Astron. and Dept. Chem., UCL, London, UK
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Steven R. Schofield
- London Ctr. Nanotech. and Dept. Phys. \& Astron., UCL, London, UK
- UCL, UK
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Veronika Brazdova
- UCL, UK
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David R. Bowler
- University College London and London Centre for Nanotechnology
- London Ctr. Nanotech. and Dept. Phys. \& Astron., UCL, London, UK
- UCL, UK
- University College London/London Centre for Nanotechnology, UK
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Neil J. Curson
- London Ctr. Nanotech. and Dept. Electron. \& Elec., UCL, London, UK
- UCL, UK
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Ab initio shallow impurity level calculations in semiconductors
ORAL
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Authors
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Gaigong Zhang
- UC Davis
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Andrew Canning
- Lawrence Berkeley National Laboratory, UC Davis
- UC Davis/ LBNL
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Niels Jensen
- UC Davis/ LBNL
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Stephen Derenzo
- LBNL
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Lin-Wang Wang
- Lawrence Berkeley National Laboratory
- Lawrence Berkeley National Labortaory
- Material Sciences Division
- Lawrence Berkeley National Lab
- LBNL
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First principles study of phosphorus and boron defects in Si-XII
ORAL
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Authors
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Brad D. Malone
- Department of Physics, University of California, Berkeley, and Materials Science Division, Lawrence Berkeley National Laboratory
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Marvin L. Cohen
- University of California at Berkeley and Lawrence Berkeley National Laboratory
- University of California, Berkeley
- University of California Berkeley
- University of California at Berkeley and Lawrence Berkeley National Lab
- Department of Physics, University of California, Berkeley, and Materials Science Division, Lawrence Berkeley National Laboratory
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Stability of donor-pair defects in $Si_{1-x}Ge_x$ alloy nanowires
ORAL
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Authors
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Ji-Sang Park
- Department of Physics, Korea Advanced Institute of Science and Technology
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Byungki Ryu
- Department of Physics, Korea Advanced Institute of Science and Technology
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K.J. Chang
- Department of Physics, Korea Advanced Institute of Science and Technology
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New electronic effects observed on n-type Si(111)2x1 using cross-sectional STM
ORAL
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Authors
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Neil J. Curson
- London Ctr. Nanotech. and Dept. Electron. \& Elec., UCL, London, UK
- UCL, UK
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Philipp Studer
- London Ctr. Nanotech. and Dept. Electron. \& Elec., UCL, London, UK
- UCL, UK
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Steven R. Schofield
- UCL, UK
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Greg Lever
- UCL, UK
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David R. Bowler
- University College London and London Centre for Nanotechnology
- London Ctr. Nanotech. and Dept. Phys. \& Astron., UCL, London, UK
- UCL, UK
- University College London/London Centre for Nanotechnology, UK
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Cyrus F. Hirjibehedin
- UCL, UK
- London Ctr. Nanotech., Dept. Phys. \& Astron. and Dept. Chem., UCL, London, UK
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Charged Defects in the Si(001) Surface
ORAL
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Authors
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Steven R. Schofield
- London Ctr. Nanotech. and Dept. Phys. \& Astron., UCL, London, UK
- UCL, UK
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Philipp Studer
- London Ctr. Nanotech. and Dept. Electron. \& Elec., UCL, London, UK
- UCL, UK
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Cyrus F. Hirjibehedin
- UCL, UK
- London Ctr. Nanotech., Dept. Phys. \& Astron. and Dept. Chem., UCL, London, UK
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Neil J. Curson
- London Ctr. Nanotech. and Dept. Electron. \& Elec., UCL, London, UK
- UCL, UK
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Gabriel Aeppli
- London Ctr. Nanotech. and Dept. Phys. \& Astron., UCL, London, UK
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David R. Bowler
- University College London and London Centre for Nanotechnology
- London Ctr. Nanotech. and Dept. Phys. \& Astron., UCL, London, UK
- UCL, UK
- University College London/London Centre for Nanotechnology, UK
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Near surface dopant depletion in UHV prepared H-Si(100): spectroscopic and imaging effects
ORAL
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Authors
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Jason Pitters
- NINT-NRC
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Robert Wolkow
- University of Alberta
- National Institute for Nanotechnology
- University of Alberta/NINT
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Ab initio study of water molecule dissociation on the hydrogenated Si(100) surface
ORAL
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Authors
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Marilia J. Caldas
- Institute of Physics, University of Sao Paulo
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Regina Lelis-Sousa
- Institute of Physics, University of Sao Paulo
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