Growth and Morphology of High Mobility Organic Semiconductors

ORAL

Abstract

We utilize atomic force microscopy (AFM) to image the growth and morphology of chemically modified, solution-deposited anthradithiophene transistors. We discuss the effects of backbone modifications on crystal structure, film properties, and electrical device performance. These devices display a mobility of 0.001 cm$^2$/Vs to 1 cm$^2$/Vs. Crystal orientation and film structures, such as film thickness, grain size, and growth modes will be discussed. In addition, AFM images are related to diffraction data and conduction channel crystallographic information is extracted.

*This research is supported by ASU, ASU Office of Student Research, the National Science Foundation, and Office of Naval Research.

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Authors

  • Cortney Bougher

    • Appalachian State University

  • Katelyn Goetz

    • Wake Forest University

  • Zhong Li

    • University of Kentucky

  • John Anthony

    • Department of Chemistry, University of Kentucky
    • University of Kentucky

  • Oana Jurchescu

    • Dept. of Physics, Wake Forest Univ.
    • Wake Forest University

  • Brad Conrad

    • Semiconductor Electornics Div. NIST
    • Appalachian State University