Scattering from localized strain profiles in graphene: effects on conductance

Graphene has attracted significant attention for, amongst other properties, its Dirac-like quasiparticles and long coherence length. In the ballistic regime, we theoretically investigate the scattering properties of localized strain profiles. Manipulating strain in graphene has been proposed as a novel method of shaping graphene devices; modulated hopping parameters effectively introduce vector potentials equivalent to pseudomagnetic fields up to 300T [1]. We determine the localized potential and scattering parameters of several such ``bubbles''; with this information we calculate the effects on conductance in both valleys of introducing one or many such impurities.\\[4pt] [1] N. Levy, S. A. Burke, K. L. Meaker, M. Panlasigui, A. Zettl, F. Guinea, A. H. Castro Neto and M. F. Crommie, Science 30, July 2010