Sketched ferroelectric single-electron transistor
ORAL
Abstract
Oxide heterostructures formed from ultrathin layers of LaAlO$_{3}$ grown on TiO$_{2}$-terminated SrTiO$_{3}$, combined with a reversible nanoscale patterning technique, provide a versatile platform for nanoscale control at the single-electron limit. Here we demonstrate the creation and characterization of ``sketched'' single-electron transistors made from ultrasmall (1-2 nm) quantum dots. Shell filling from N=0 up to N=2 electrons by single-electron tunneling is observed. Resonant tunneling can be controlled in a deterministic and non-volatile fashion by altering the ferroelectric polarization within the SrTiO$_{3}$ tunnel barrier. These single-electron devices may find use as nanoscale hybrid piezoelectric/charge sensors, and as elemental building blocks for solid-state quantum computation and quantum simulation platforms.
*This work was supported by NSF DMR-0704022 (JL), DARPA (W911NF-09-10258, JL), ARO (W911NF-08-1-0317, JL), The Fine Foundation (JL), AFOSR (FA9550-10-1-0524, J.L. and C.B.E), NSF DMR-0906443 (CBE), a David and Lucile Packard Fellowship (CBE).
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