Van der Waals epitaxial growth and transport properties of Bi2Se3 thin films

POSTER

Abstract

Thin films of Bi$_{2}$Se$_{3}$ with high carrier mobility are grown with van der Waals epitaxy method in ultra-high vacuum environment on single crystal Sapphire (0001) and single crystal SrTiO$_{3}$ (111) surfaces. \textit{Ex-situ} transport measurement revealed weak-antilocalization-like behavior at small out-of-plane magnetic field (B$_{o})$ and non-linear Hall conductance versus Bo. The carrier concentration of the Bi$_{2}$Se$_{3}$ can be substantially tuned with applied electric field through the SrTiO$_{3}$ substrate.

*This work was supported by the UMD NSF-MRSEC grant no. DMR 05-20741.

Authors

  • Jian-Hao Chen

  • Jack Hellerstedt

  • William Cullen

  • Michael Fuhrer

    • University of Maryland
    • Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742-4111, USA
    • Center for Nanophysics and Advanced Materials, University of Maryland, College Park
    • Center for Nanophysics and Advanced Materials, Univesity of Maryland
    • Materials Research Science and Engineering Center and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland
    • Dept. of Physics, Materials Research Science and Engineering Center and Center for Nanophysics and Advanced Materials, Univ. of Maryland, College Park