Focus Session: Graphene Growth, Characterization, and Devices: Devices and Contacts

Presentations

• BN / Graphene / BN RF Transistors

  ORAL

  March 21, 2011, 11:15 AM – March 21, 2011, 11:27 AM

  Authors

  • Han Wang

    • MIT

  • Thiti Taychatanapat

    • Harvard University

  • Allen Hsu

    • MIT

  • Pablo Jarillo-Herrero

    • MIT

  • Tomas Palacios

    • MIT

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• Bilayer graphene $p-i-n$ tunnel junction controlled by modulated top gate

  ORAL

  March 21, 2011, 11:27 AM – March 21, 2011, 11:39 AM

  Authors

  • Hisao Miyazaki

    • National Institute for Materials Science, Japan
    • NIMS-MANA, JST-CREST

  • Song-Lin Li

    • NIMS-MANA, JST-CREST

  • Kazuhito Tsukagoshi

    • NIMS-MANA, JST-CREST

  • Akinobu Kanda

    • Univ. of Tsukuba, JST-CREST

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• Rectification at the graphene and multi-layer-graphene / semiconductor interface from room temperature up to 900K

  ORAL

  March 21, 2011, 11:39 AM – March 21, 2011, 11:51 AM

  Authors

  • Sefaattin Tongay

    • University of Florida, Nanoscience Institute for Medical and Engineering Technology

  • Todd Schumann

    • University of Florida, Department of Physics

  • Arthur F. Hebard

    • Department of Physics, University of Florida, Gainesville, FL 32611
    • University of Florida
    • University of Florida, Department of Physics

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• Complementary-like semiconducting graphene logic inverters

  ORAL

  March 21, 2011, 11:51 AM – March 21, 2011, 12:03 PM

  Authors

  • Song-Lin Li

    • National Institute for Materials Science, Japan

  • Hisao Miyazaki

    • National Institute for Materials Science, Japan
    • NIMS-MANA, JST-CREST

  • Kazuhito Tsukagoshi

    • National Institute for Materials Science, Japan

  • Akinobu Kanda

    • University of Tsukuba, Japan

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• Ferroelectric gating of CVD graphene devices

  ORAL

  March 21, 2011, 12:03 PM – March 21, 2011, 12:15 PM

  Authors

  • Guangxin Ni

    • National University of Singapore

  • Yi Zheng

    • National University of Singapore

  • Kui Yao

    • Institute of Material Research and Engineering (IMRE)

  • Barbaros \"Ozyilmaz

    • National University of Singapore

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• Electrical noise in graphene FETs

  ORAL

  March 21, 2011, 12:15 PM – March 21, 2011, 12:27 PM

  Authors

  • Nan Sun

    • University of Notre Dame

  • Kristof Tahy

    • University of Notre Dame

  • Gerald Arnold

    • University of Notre Dame

  • Debdeep Jena

    • University of Notre Dame

  • Huili Xing

    • University of Notre Dame

  • Steven Ruggiero

    • University of Notre Dame

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• Development of epitaxial graphene based electronics

  COFFEE_KLATCH · Invited

  March 21, 2011, 12:27 PM – March 21, 2011, 1:03 PM

  Authors

  • Walt de Heer

    • Georgia Institute of Technology
    • School of Physics, Georgia Institute of Technology

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• Metal selection criteria for enhancing electrical conductance of metal-graphene junctions

  ORAL

  March 21, 2011, 1:03 PM – March 21, 2011, 1:15 PM

  Authors

  • Marcelo Kuroda

    • Univ. of Illinois - IBM T.J. Watson

  • J. Tersoff

    • IBM T. J. Watson Center
    • IBM T.J. Watson R.C.

  • Dennis Newns

    • IBM T. J. Watson Research Center
    • IBM T.J. Watson

  • Glenn Martyna

    • IBM T. J. Watson Research Center
    • IBM T.J. Watson R.C.

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• Influence of Metal Contact on the Operation and Scalability of Graphene Field-Effect-Transistors

  ORAL

  March 21, 2011, 1:15 PM – March 21, 2011, 1:27 PM

  Authors

  • Pei Zhao

    • University of Notre Dame

  • Qin Zhang

    • CMOS and Novel Devices Group, National Institute of Standards and Technology

  • Debdeep Jena

    • University of Notre Dame

  • Siyuranga O. Koswatta

    • IBM Research Division, T. J. Watson Research Center

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• Flexible and Transparent Field Emission Devices based on Graphene-Nanowire Hybrid Structures

  ORAL

  March 21, 2011, 1:27 PM – March 21, 2011, 1:39 PM

  Authors

  • Muhammad Arif

    • Department of Physics and Astronomy, Seoul National University, Seoul, Korea

  • Kwang Heo

    • Department of Physics and Astronomy, Seoul National University, Seoul, Korea

  • Byung Yang Lee

    • Department of Physics and Astronomy, Seoul National University, Seoul, Korea

  • David H. Seo

    • Semiconductor Devices Lab., Samsung Advanced Institute of Tech., Yongin-Si, Gyeonggi-do, Korea

  • Sunae Seo

    • Semiconductor Devices Lab., Samsung Advanced Institute of Tech., Yongin-Si, Gyeonggi-do, Korea

  • Jikang Jian

    • Department of Physics, Xinjiang University, Xinjiang 830046, P. R. China

  • Seunghun Hong

    • Department of Biophysics and Chemical Biology, Seoul National University, Seoul 151-747, Korea
    • Department of Physics and Astronomy; Department of Biophysics and Chemical Biology, Seoul National University, Seoul 151-747, Korea
    • Department of Physics and Astronomy, Seoul National University, Seoul, Korea

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• CVD grown graphene field-effect device arrays with water top gate

  ORAL

  March 21, 2011, 1:39 PM – March 21, 2011, 1:51 PM

  Authors

  • Bei Wang

    • Physics Department, The Pennsylvania State University

  • B. Koger

    • Physics Department, The Pennsylvania State University

  • J. Zhu

    • Penn State University
    • Department of Physics, The Pennsylvania State University
    • Physics Department, The Pennsylvania State University

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• Graphene p-n Junctions via Molecular Functionalization

  ORAL

  March 21, 2011, 1:51 PM – March 21, 2011, 2:03 PM

  Authors

  • Ren-Jye Shiue

    • Academia Sinica

  • Hung-Chieh Cheng

    • National Taiwan University

  • Chia-Chang Tsai

    • National Taiwan University

  • Yit-Tsong Chen

    • National Taiwan University

  • Wei-Hua Wang

    • Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan

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• Device fabrication progress on epitaxial graphene on SiC

  ORAL

  March 21, 2011, 2:03 PM – March 21, 2011, 2:15 PM

  Authors

  • Yike Hu

    • Georgia Tech

  • Zelei Guo

    • Georgia Institute of Technology
    • Georgia Tech

  • Rui Dong

    • Georgia Tech

  • Claire Berger

    • Georgia Institute of Technology \& CNRS- Institut N\'eel
    • School of Physics, Georgia Institute of Technology; Institut N\'eel, CNRS, Grenoble, France
    • Georgia Tech

  • Walt deHeer

    • Georgia Institute of Technology
    • Georgia Tech

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