Focus Session: Dielectric, Ferroelectric, and Piezoelectric Oxides: Electronic Conduction and Defects
ORAL · B33 ·
Presentations
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Conduction at different ferroelectric domain walls in BiFeO$_{3}$
ORAL
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Authors
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Saeedeh Farokhipoor
- Zernike Institute for Advanced Materials, University of Groningen
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Christophe Daumont
- Zernike Institute for Advanced Materials, University of Groningen
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Beatriz Noheda
- Zernike Institute for Advanced Materials, University of Groningen
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Electronic Transport properties of ultra-thin BiFeO$_{3}$
ORAL
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Authors
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Dipanjan Mazumdar
- University of Alabama
- Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487
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Oleg Mryasov
- University of Alabama, Department of Physics
- Center for Materials for Information Technology, University of Alabama, Tuscaloosa AL 35487
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Vilas Shelke
- Center for Materials for Information Technology, University of Alabama, Tuscaloosa AL 35487
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Stephen Jesse
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge Tennessee.
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Art P. Baddorf
- Oak Ridge National Laboratory
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge Tennessee.
- CNMS, Oak Ridge National Lab
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Sergei Kalinin
- Center for Nanophase Materials Scieces, Oak Ridge National Laboratory
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge Tennessee.
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Arunava Gupta
- University of Alabama
- Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487
- Center for Materials for Information Technology, University of Alabama, Tuscaloosa AL 35487
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Oxygen vacancies in lanthanum aluminate (LaAlO$_3$)
ORAL
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Authors
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Joshua Sayre
- University of California, Santa Barbara
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Nicola Spaldin
- Dept. Materials, ETH Zurich, Switzerland
- ETH Z\"urich
- Materials Department, University of California Santa Barbara / Department of Materials, ETH Zurich
- UC Santa Barbara
- University of California, Santa Barbara
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Defect-Induced Electronic Structures and Formation Energies of Vacancy Complexes in SrTiO$_{3}$
ORAL
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Authors
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Jiyeon Kim
- Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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Choong H. Kim
- Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea
- Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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Rokyeon Kim
- Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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Jaejun Yu
- Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea
- Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
- epartment of Physics and Astronomy, Seoul National University
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Quasiparticle electronic structure calculations of F centers in SrTiO$_{3}$ perovskite
ORAL
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Authors
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Chandrima Mitra
- The University of Texas at Austin
- University of Texas at Austin
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Alex Demkov
- Department of Physics, The University of Texas at Austin
- The University of Texas at Austin
- The University of Texas at Austin,TX
- University of Texas at Austin
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Charge transition levels of oxygen vacancies in monoclinic hafnia
ORAL
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Authors
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Manish Jain
- University of California, Berkeley and Lawrence Berkeley National Laboratory
- University of California at Berkeley and Lawrence Berkeley National Lab
- University of California at Berkeley and Lawrence Berkeley National Laboratory
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James R. Chelikowsky
- University of Texas
- University of Texas at Austin
- UT Austin
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Steven G. Louie
- University of California, Berkeley and Lawrence Berkeley National Laboratory
- Department of Physics, University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley National Lab
- UC Berkeley
- Department of Physics, U. C. Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory
- University of California at Berkeley and Lawrence Berkeley National Laboratory
- University of California-Berkeley and Lawrence Berkeley National Lab
- Department of Physics, University of California at Berkeley
- Phys Dept. UC Berkeley
- Department of Physics, University of California, Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
- University of California at Berkeley and Lawrence Berkeley National Lab
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ABSTRACT WITHDRAWN
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Disproportionation and comproportionation reactions of resistive switching in polycrystalline NiOx films
ORAL
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Authors
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Forest S.-S. Chien
- Department of Physics, Tunghai University
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Yi-Ta Wu
- Department of Physics, Tunghai University
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Guan-Long Lai
- Department of Physics, Tunghai University
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Y.H. Lai
- Department of Chemistry, Tunghai University
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The effect of oxygen migration for random resistance access memory in oxide-based devices
ORAL
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Authors
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Zhaoliang Liao
- Louisiana State University \& Institute of Physics, Chinese Academy of Sciences
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Peng Gao
- Institute of Physics, Chinese Academy of Sciences
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Yang Meng
- Institute of Physics, Chinese Academy of Sciences
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Hongwu Zhao
- Institute of Physics, Chinese Academy of Sciences
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Xuedong Bai
- Institute of Physics, Chinese Academy of Sciences
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Dongmin Chen
- Institute of Physics, Chinese Academy of Sciences
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Conduction and Loss Mechanisms in Flexible Oxide-Based Memristors
ORAL
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Authors
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J.L. Tedesco
- National Institute of Standards \& Technology
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N. Gergel-Hackett
- Semiconductor Electronics Division, NIST
- National Institute of Standards \& Technology
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L. Stephey
- National Institute of Standards \& Technology
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A.A. Herzing
- National Institute of Standards \& Technology
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M. Hernandez-Mora
- National Institute of Standards \& Technology
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C.A. Hacker
- Semiconductor Electornics Div. NIST
- National Institute of Standards \& Technology
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J. Obrzut
- NIST
- National Institute of Standards \& Technology
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L.J. Richter
- National Institute of Standards \& Technology
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C.A. Richter
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899
- Semiconductor Electornics Div. NIST
- PML, NIST, Gaithersburg, MD, 20899
- Semiconductor Electronics Division, NIST
- National Institute of Standards \& Technology
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Capacitive network near the metal insulator transition in Vanadium Dioxide
ORAL
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Authors
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J.G. Ramirez
- Universidad de los Andes
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E.J. Patino
- Universidad de los Andes
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R. Schmidt
- Universidad Complutense de Madrid
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A. Sharoni
- Bar-Ilan University
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M.E. Gomez
- Physics Department Universidad del Valle Cali, Colombia
- Universidad del Valle
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I.K. Schuller
- Department of Physics and Center for Advanced Nanotechnology, University of California San Diego, La Jolla, California 92093
- University of California, San Diego
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla CA 92093
- University of California-San Diego
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Substitution site for Zn in LiNbO$_3$ from detailed EXAFS analysis
ORAL
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Authors
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Frank Bridges
- UC Santa Cruz
- UCSC
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Brad Car
- UCSC
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Jaime Castillo
- Universidad Tecnologica d la Mixteca
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Michael Kozina
- UCSC
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Scott Medling
- UC Santa Cruz
- UCSC
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Structure and Magnetic Properties of Electron Doped YMnO$_{3}$
ORAL
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Authors
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Tian Yu
- New Jersey Institute of Technology
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Peng Gao
- New Jersey Institute of Technology
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Trevor Tyson
- New Jersey Institute of Technology
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First-principles calculations of Ti and O NMR chemical shift tensors in ferroelectric perovskites
ORAL
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Authors
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Daniel Pechkis
- College of William and Mary
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Eric Walter
- College of William and Mary
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Henry Krakauer
- College of William and Mary
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Electrical Breakdown in Lightning Arrestor Connector (LAC) Devices
ORAL
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Authors
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Harold P. Hjalmarson
- Sandia National Laboratories
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Kenneth Kambour
- Sandia National Laboratories
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Andrew C. Pineda
- U.S. Air Force Research Laboratory
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