Electronic, magnetic and structural properties of Cr$_{1-x}$V$_x$N

ORAL

Abstract

We report a systematic study on the electronic, magnetic and structural properties of stoichiometric and hole-doped CrN and present the magnetic and electronic phase diagram for the Cr$_{1-x}$V$_{x}$N series. Stoichiometric CrN is a narrow gap, correlation-induced, semiconductor that orders antiferromagnetically below 286 K. The changes in the chemical bond associated to the magnetic order result in a non-activated behavior of the resistivity in the antiferromagnetic state, showing some similarities with other materials proposed to be itinerant-AF, like CaCrO$_{3}$. Doping this state with holes drives the system towards itinerant electron behavior through a series of inhomogeneous magnetic/electronic states. Given the chemical and structural simplicity of this system, it could provide an interesting place to study the evolution from an antiferromagnet with a non-thermally activated charge transport to a paramagnetic metal in a non-oxide material.

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Authors

  • Camilo Quintela

    • Department of Applied Physics, University of Santiago de Compostela, Spain

  • Francisco Rivadulla

    • Physical Chemistry Dept. and Center for Research in Biological Chemistry and Molecular Materials, Univ. Santiago Compostela, Spain
    • Physical-Chemistry Department, University of Santiago de Compostela, 15782 Santiago de Compostela, Spain
    • Departament of Physical Chemistry, University of Santiago de Compostela, Spain

  • Jose Rivas

    • Applied Physics Department, University of Santiago de Compostela, Spain
    • Department of Applied Physics, University of Santiago de Compostela, Spain