Focus Session: Dopants and Defects in Semiconductors: Compound Semiconductors I
FOCUS · B12 ·
Presentations
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ABSTRACT WITHDRAWN
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Optimized basis sets for coarse-grained electronic structure calculations of point defects
ORAL
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Authors
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Bj\"orn Lange
- MPIE D\"usseldorf
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Christoph Freysoldt
- Max-Planck-Institut fuer Eisenforschung, Duesseldorf, Germany
- MPIE D\"usseldorf
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Joerg Neugebauer
- Max-Planck-Institut fuer Eisenforschung, Duesseldorf, Germany
- MPIE D\"usseldorf
- Dept. for Computational Materials Design, Max-Planck-Institut fuer Eisenforschung GmbH, Duesseldorf, Germany
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Strain-Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State
ORAL
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Authors
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Junyi Zhu
- 1 National Renewable Energy Lab 2 University of Utah
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Feng Liu
- University of Utah
- Department of Materials Science and Engineering, University of Utah
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Gerald Stringfellow
- University of Utah
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Suhuai Wei
- National Renewable Energy Lab
- National Renewable Energy Laboratory, Golden, Colorado 80401, USA
- National Renewable Energy Laboratory
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Defects and Carrier Compensation in CdTe
COFFEE_KLATCH · Invited
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Authors
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Mao-Hua Du
- Oak RIdge National Laboratory
- Oak Ridge National Laboratory
- Materials Science and Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory, Oak Ridge, TN 37831
- Materials Science and Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory
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n-type doping in $Cu_{2}O$ by halogen impurities: a first-principles study
ORAL
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Authors
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Qiong Bai
- University of Texas at Arlington
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Meng Tao
- University of Texas at Arlington
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Qiming Zhang
- University of Texas at Arlington
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Diffusion of ion implanted indium in ZnO crystals
ORAL
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Authors
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Faisal Yaqoob
- University at Albany-SUNY
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Mengbing Huang
- University at Albany-SUNY
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David Look
- Wright State University
- Wright State University and Air Force Research Laboratory
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Surface effects in Co-doped ZnO nanocrystals
ORAL
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Authors
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Aline L. Schoenhalz
- Universidade Federal do ABC
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Gustavo M. Dalpian
- Universidade Federal do ABC
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Vacancy-assisted migration of group-III impurities in ZnO
ORAL
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Authors
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Daniel Steiauf
- Materials Department, University of California, Santa Barbara, CA 93106
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John L. Lyons
- Materials Department, University of California, Santa Barbara, CA 93106
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Anderson Janotti
- Materials Department, University of California, Santa Barbara, CA 93106
- Materials Department, University of California, Santa Barbara, CA 93106-5050
- University of California at Santa Barbara
- University of California Santa Barbara
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Chris G. Van de Walle
- Materials Department, University of California, Santa Barbara, CA 93106
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Improved LDA+U model for band gap corrected ZnO defect calculations
ORAL
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Authors
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Adisak Boonchun
- Case Western Reserve University
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Walter Lambrecht
- Case Western Reserve University
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Hybrid density functional study of gallium in ZnO
ORAL
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Authors
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Denis Demchenko
- Virginia Commonwealth University
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Study of defects in TlBr, InI as potential semiconductor radiation detectors
ORAL
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Authors
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Koushik Biswas
- Oak Ridge National Laboratory
- Materials Science and Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Mao-Hua Du
- Oak RIdge National Laboratory
- Oak Ridge National Laboratory
- Materials Science and Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory, Oak Ridge, TN 37831
- Materials Science and Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory
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Information-based screens for deep traps in semiconducting materials
ORAL
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Authors
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Kim Ferris
- Pacific Northwest National Laboratory
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Kunal Shah
- Pacific Northwest National Laboratory
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Dumont Jones
- Proximate Technologies, LLC.
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Ab-Initio analysis of TlBr: limiting the ionic current without degrading the electronic one
ORAL
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Authors
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Cedric Rocha Leao
- Lawrence Livermore National Lab
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Vincenzo Lordi
- Lawrence Livermore National Laboratory
- Lawrence Livermore National Lab
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