Studies of the (013) HgTe/Cd$_x$Hg$_{1-x}$Te heterostructure in tilted high magnetic fields

Properties of 2D carriers in the symmetrically doped Cd$_x$Hg$_ {1-x}$Te/HgTe/Cd$_x$Hg$_{1-x}$Te heterostructure with the quantum well thickness of 20 nm, carrier density n = 1.6 $\times$10$^{11}$\,cm$^{-2}$, and mobility $\mu$ = 28 $m^2/Vs$ were studied in tilted magnetic fields of up to 18 T at temperature 0.6 K. The heterostructure was grown on a (013) surface of a GaAs wafer as it was expected that the quantum well quality might be better than if created on a customary (001) surface. Coincidence of quantum levels in the range of SdH oscillations at $\nu$ = 4 and 6 was observed at the tilt angle values of about 67, 78, and 83$^0$. Thus, m*g*/m$_0 $=0.786 and if the effective mass m*/m$_0$ = 0.024, the effective g-factor g*=33 in agreement with the value obtained on the (001) oriented HgTe/Cd$_x$Hg$_{1-x}$Te wells. However, in the quantum Hall regime at $\nu$ = 3 maximum of the magnetoresistance does not occur at the corresponding critical angle of 78$^0$.