Effect of Bi incorporation on the carrier mobility in the dilute bismide alloy, GaAsBi

Results from our study of carrier mobilities in doped GaAs1-xBix epilayers will be presented and compared with the dilute nitride alloy, GaAsN. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2{\%}. At higher Bi concentration ($\ge $1.6{\%}) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependant Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism. We will also present data on the effect of Bi alloying on the hole mobility.