The measurements of thermopower and thermal conductivity of an In$_{2}$O$_{3}$ nanowire through a general purpose template

In order to study the electron-phonon transport properties in a single nanowire for various materials, a platform of Si/Si$_{3}$N$_{4}$ for the purpose was designed to perform the measurements of thermal power and thermal conductivity simultaneously. A single In$_{2}$O$_{3}$ nanowire was placed on the platform by manipulation probes and carefully examined. A sagging structure of In$_{2}$O$_{3}$ nanowire was prepared by E-beam lithographic and reactive ion etching techniques. The In$_{2}$O$_{3}$ nanowire with length of 30 $\mu $m and diameter of 100 nm was revealed by SEM images, The resistivity measured using four-probe method indicated a semiconducting like behavior in the range temperature from 10 K to 300 K with room-temperature resistivity about 2.17 m$\Omega $-cm at 300 K. Meanwhile, the thermopower and the thermal conductivity of In$_{2}$O$_{3}$ nanowire measured by steady state and self-heating 3$\omega $ method respectively are also obtained and was discussed in details.