First principle investigations of the dielectric properties of Si3N4 thin films
ORAL
Abstract
We have investigated the dielectric properties of silicon nitride thin films with thickness below 10 nm, by using first-principles density functional theory calculations. We find a substantial decrease of the static dielectric constant as the size is reduced, and the variation of the response in proximity of the film surfaces play a key role in the observed decrease. In addition, amorphization of the films can bring further reduction of both the static and optical dielectric constants.
*We acknowledge financial support from Intel Corporation
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Authors
Tuan Anh Pham
Department of Chemistry, University of California Davis
Tianshu Li
Department of Chemistry, University of California Davis
University of California, Davis
Dept. Chemistry, UC Davis
Department of Physics, University of California, Davis, CA 95616
Sadasivan Shankar
Intel Corporation, Santa Clara, California, USA
Francois Gygi
Department of Applied Science and Department of Computer Science, University of California Davis
University of California Davis
Dept. Applied Science \& Dept. Computer Science, UC Davis
UC Davis
Dept. of Applied Science and Dept. of Computer Science, UC Davis
Giulia Galli
Dept. of Chemistry and Dept. of Physics, UC Davis
Department of Chemistry and Department of Physics, University of California Davis
Dept of Chemistry \& Dept Physics, UC Davis
Department of Chemistry and Department of Physics, UC Davis, USA
Department of Chemistry and Department of Physics, University of California, Davis
UC Davis
Department of Chemistry, University of California, Davis, USA
University of California, Davis
Department of Chemistry and Department of Physics, University of California, Davis, CA, 95616
Department of Chemistry and Department of Physics, University of California, Davis, CA 95616
Chemistry Department and Physics Department UC Davis, Davis CA