Unusual Photoluminescence in Ultrathin MoS$_{2}$

ORAL

Abstract

In this talk we will report optical studies on ultrathin MoS$_{2}$ layers through optical reflection, Raman scattering, and photoluminescence spectroscopy. Bulk MoS$_{2}$, a layered transition metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. Surprisingly, when the thickness of MoS$_{2}$ is reduced to a few unit cell thickness, a strong photoluminescence emerges. Further this photoluminescence increases with reduced MoS$_{2}$ layer thickness, although available materials amount is reduced. We will discuss possible mechanism that can give rise to this surprising photoluminescence behavior in MoS$_{2}$.

Authors

  • Liang Sun

    • Phys. Dept., UC Berkeley
  • Andrea Splendiani

    • Phys. Dept., UC Berkeley, Scuola Galileiana di Studi Superiori di Padova
  • Yuanbo Zhang

    • Phys. Dept., UC Berkeley
  • Tianshu Li

    • Chem. Dept., UC Davis
  • Jonghwan Kim

    • Phys. Dept., UC Berkeley
  • Chi-Yung Chim

    • Phys. Dept., UC Berkeley
  • Giulia Galli

    • Chem. Dept., UC Davis
  • Feng Wang

    • Phys. Dept., UC Berkeley, Materials Science Division, LBNL